View IRAM136-0461G_1265757.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRAM136-0461G series 4a, 600v www.irf.com 1 plug n drive tm integrated power module for energy efficient motor drives description international rectifiers IRAM136-0461G is an integrated power module developed and optimized for elec- tronic motor control in energy saving applications. targeting the sub 300w three-phase motor drive applications, such as fan or refrigerator compressor drives, this module offers the highest level of integra- tion available in the market today. it features an input diode rectification bridge and a three-phase inverter, complete with bootstrap diodes, high voltage gate driver ic, current shunt resistor and temperature sensor. this high performance ac motor-driver is housed in a compact single-in-line isolated package for a very simple design. the internal shunt offers easy current feedback for precise control and safe operation. a built-in tem- perature monitor and logic level shut-down function, along with the short-circuit rated igbts and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. pd-97271 reva features ? internal rectifier diode bridge ? internal shunt resistor ? integrated gate drivers and bootstrap diodes ? temperature monitor ? undervoltage lockout for all channels ? matched propagation delay for all channels ? schmitt-triggered input logic ? cross-conduction prevention logic ? lower di/dt gate driver for better noise immunity ? motor power range 0.1~0.3kw / up to 253v, 50/60hz ? isolation 2000v rms /1min absolute maximum ratings parameter description max. value units v rrm input bridge blocking voltage 600 v ces igbt blocking voltage 600 v + positive bus input voltage 450 i o @ t c =25c rms phase current (f pwm =20khz) 3.6 i o @ t c =100c rms phase current (f pwm =20khz) 2 i o pk pulsed rms phase current (t p <100ms, f pwm =20khz) 5 f pwm pwm carrier frequency 20 khz p d power dissipation per igbt @ t c =25c 16 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diodes) operating junction temperature range -40 to +150 t j (driver ic) operating junction temperature range -40 to +150 t mounting torque (m3 screw) 1.0 nm v c 1 23 www.datasheet.in
IRAM136-0461G 2 www.irf.com internal electrical schematic - IRAM136-0461G 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 gnd_1 (5) vb1 (11) u, vs1 (12) vb2 (9) v, vs2 (10) vb3 (7) w, vs3 (8) r 9 vcc (14) vss (23) r 7 r 1 driver ic lo1 16 lo3 14 lo2 15 shunt+ (22) hin1 (15) hin2 (16) hin3 (17) lin1 (18) lin2 (19) lin3 (20) vbus_2 (4) vth (13) c 5 itrip(21) thermistor r 8 r 10 ac (1) ac (2) vbus_1 (3) r 2 r 3 r 4 r 5 r 6 d 10 d 11 d 13 d 12 q 1 q 2 q 3 q 6 q 5 q 4 d 1 d 2 d 3 d 6 d 4 d 5 d 7 d 8 d 9 d 14 d 15 d 16 d 17 d 19 d 18 www.datasheet.in
IRAM136-0461G www.irf.com 3 absolute maximum ratings (continued) symbol parameter max units i dc input bridge dc output current 9.4 a @t c =100c, 180 cond. square wave i f(av) average output forward current 8.7 a @t c =100c, 180 cond. sine wave 100 a 8.3ms sine pulse rated v rrm applied 95 a 10ms sine pulse 80% rated v rrm applied i 2 ti 2 t for fusing 45.12 a 2 s 10ms sine pulse 80% rated v rrm applied i 2 t 0.5 i 2 t 0.5 for fusing 638 a 2 s 0.5 t=0.1 to 10 ms, no voltage applied peak one cycle non-repetitive surge current @ t j =150c i fsm symbol parameter min max units conditions i bdf bootstrap diode peak forward current --- 4.5 a t p = 10ms, t j = 150c, t c =100c p br peak bootstrap resistor peak power (single pulse) --- 25.0 w t p =100s, t c =100c v s1,2,3 high side floating supply voltage v b1,2,3 - 25 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage -0.3 600 v v cc low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, i trip -0.3 lower of (v ss +15v) or v cc +0.3v v absolute maximum ratings driver function absolute maximum ratings indicate substained limits beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to com/v ss . www.datasheet.in
IRAM136-0461G 4 www.irf.com input bridge section electrical characteristics @t j = 25c symbol parameter min typ max units conditions --- 1 1.2 v @ i fm = 4a, t j =25c --- 0.9 1.05 v @ i fm = 4a, t j =150c r t forward slope resistance --- 22 59 m ? v f(td) threshold voltage --- 0.81 0.84 v --- 2 15 t j =25c, v r = rated v rr --- 115 190 t j =150c, v r = rated v rr t j =150c v fm forward voltage drop i rm reverese leakage current a inverter section electrical characteristics @t j = 25c symbol parameter min typ max units conditions v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =5v, i c =250a ? v (br)ces / ? t temperature coeff. of breakdown voltage --- 0.74 --- v/c v in =5v, i c =1.0ma (25c - 150c) --- 1.95 2.20 i c =2a, v cc =15v --- 2.40 2.80 i c =2a, v cc =15v, t j =150c --- 1 75 v in =5v, v + =600v --- 160 --- v in =5v, v + =600v, t j =150c --- 1.25 1.65 i c =2a --- 1.20 1.60 i c =2a, t j =150c -- -- 1.25 i f =1a --- --- 1.10 i f =1a, t j =125c r br bootstrap resistor value --- 22 --- ? ? r br /r br bootstrap resistor tolerance --- --- 5 % v ce(on) collector-to-emitter saturation voltage v v fm diode forward voltage drop i ces zero gate voltage collector current a v v bdfm bootstrap diode forward voltage drop v www.datasheet.in
IRAM136-0461G www.irf.com 5 inverter section switching characteristics @ t j = 25c symbol parameter min typ max units conditions e on turn-on switching loss --- 180 260 e off turn-off switching loss --- 65 140 e tot total switching loss --- 245 400 e rec diode reverse recovery energy --- 5 15 t rr diode reverse recovery time --- 240 --- ns e on turn-on swtiching loss --- 210 305 e off turn-off switching loss --- 80 150 e tot total switching loss --- 290 455 e rec diode reverse recovery energy --- 15 35 t rr diode reverse recovery time --- 285 --- ns q g turn-on igbt gate charge --- 0.84 1.3 nc i c =2a, v + =400v, v ge =15v rbsoa reverse bias safe operating area t j =150c, i c =2a, v p =600v v + = 450v v cc =+15v to 0v see ct3 scsoa short circuit safe operating area 10 --- --- s t j =150c, v p =600v, v + = 360v, v cc =+15v to 0v see ct2 i csc short circuit collector current --- 11 --- a t j =150c, v p =600v, t sc <10s v + = 360v, v ge =15v v cc =+15v to 0v see ct2 j i c =2a, v + =400v v cc =15v, l=1mh energy losses include "tail" and diode reverse recovery see ct1 i c =2a, v + =400v v cc =15v, l=1mh, t j =150c energy losses include "tail" and diode reverse recovery see ct1 full square j www.datasheet.in
IRAM136-0461G 6 www.irf.com symbol definition min max units ac ac input voltage --- 253 v ac ac input frequency 50 60 hz v b1,2,3 high side floating supply voltage v s +12 v s +20 v s1,2,3 high side floating supply offset voltage note 3 450 v cc low side and logic fixed supply voltage 12 20 v itrip i trip input voltage v ss v ss +5 v in logic input voltage lin, hin v ss v ss +5 v note 2: for more details, see ir21365 data sheet recommended operating conditions the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. all voltages are absolute referenced to com/v ss . the offset is tested with all supplies biased at 15v differential (note 2) note 3: logic operational for v s from gnd -5v to gnd +600v. logic state held for v s from gnd -5v to gnd -v bs . (please refer to dt97-3 for more details) v v symbol definition min typ max units v ih logic "0" input voltage 3.0 --- --- v v il logic "1" input voltage --- --- 0.8 v v in,clamp input clamp voltage (hin, lin, t/i trip ) i in =10a 4.9 5.2 5.5 v i qbs quiescent v bs supply current v in =0v --- --- 165 a i qcc quiescent v cc supply current v in =0v --- --- 3.35 ma i lk offset supply leakage current --- --- 60 a i in+ , i en+ input bias current v in =5v --- 200 300 a i in- , i en- input bias current v in =0v --- 100 220 a i trip+ i trip bias current v itrip =5v --- 30 100 a i trip- i trip bias current v itrip =0v --- 0 1 a 11.6 v 11.4 v v ccuv+ v bsuv+ v cc and v bs supply undervoltage positive going threshold v ccuv- v bsuv- v cc and v bs supply undervoltage negative going threshold 10.4 10.9 10.6 11.1 --- v v ccuvh v bsuvh v cc and v bs supply undervoltage lock-out hysteresis --- 0.2 static electrical characteristics driver function v bias (v cc , v bs1,2,3 )=15v, unless otherwise specified. the vin and iin parameters are referenced to v ss /com and are applicable to all six channels. (note 2) www.datasheet.in
IRAM136-0461G www.irf.com 7 symbol definition min typ max units v(i trip )i trip threshold voltage 3.85 4.3 4.75 v v(i trip ,hys) i trip input hysteresis --- 150 --- mv r on,flt falut output on resistance --- 70 100 ohm static electrical characteristics driver function (continued) symbol parameter min typ max units conditions t on input to output propagation turn- on delay time (see fig.11) --- 700 --- ns t off input to output propagation turn- off delay time (see fig. 11) --- 515 --- ns t flin input filter time (hin, lin) 100 200 --- ns v in =0 & v in =5v t blt-trip i trip blancking time 100 150 ns v in =0 & v in =5v d t dead time (v bs =v cc =15v) 220 290 360 ns v bs =v cc =15v m t matchin g propa g ation delay time (on & off) --- 40 75 ns v cc = v bs = 15v, external dead time> 400ns t itrip i trip to six switch to turn-off propagation delay (see fig. 2) --- --- 1.75 s v cc =v bs = 15v, i c =10a, v + =300v --- 7.7 --- t c = 25c --- 6.7 --- t c = 100c dynamic electrical characteristics driver only timing unless otherwise specified. v cc =v bs = 15v, i c =2a, v + =400v post i trip to six switch to turn-off clear time (see fig. 2) t flt-clr ms www.datasheet.in
IRAM136-0461G 8 www.irf.com thermistor pin connection v ss (23) vth (13) driver ic ntc +5v 2kohm symbol parameter min typ max units conditions r th(j-c) igbt junction to case thermal resistance (igbt). --- 6.6 7.6 r th(j-c) fw diode junction to case thermal resistance (fw diode). --- 8.8 10.8 r th(j-c) input diode junction to case thermal resistance (input diode). --- 6.0 7.5 r th(c-s) case to sink thermal resistance --- 0.1 --- t mounting tourque 0.5 0.6 1.0 nm mounting tourque c/w flat, greased surface. heatsink compound thermal conductivity 1w/mk internal current sensing resistor - shunt characteristics symbol parameter min typ max units conditions r shunt resistance 336.6 340.0 343.4 m ? t c = 25c t coeff temperature coefficient 0 --- 200 ppm/c p shunt power dissipation --- --- 1.5 w -40c< t c <100c t range temperature range -40 --- 125 c internal ntc - thermistor characteristics parameter definition min typ max units conditions r 25 resistance 20.9 22 23.1 k ? t c = 25c r 125 resistance 2.25 2.52 2.5 k ? t c = 125c b b-constant (25-50c) 3832 3950 4335 k r 2 = r 1 e [b(1/t2 - 1/t1)] temperature range -40 125 c typ. dissipation constant 1 mw/c t c = 25c thermal and mechanical characteristics www.datasheet.in
IRAM136-0461G www.irf.com 9 module pin-out description 1 23 pin name description 1acac input 2acac input 3 vbus_1 input bridge positive output 4 vbus_2 positive bus input voltage 5 gnd negative bus input voltage 6nanone 7 vb3 high side floating supply voltage 3 8 w,vs3 output 3 - high side floating supply offset voltage 3 9 vb2 high side floating supply voltage 2 10 v,vs2 output 2 - high side floating supply offset voltage 2 11 vb1 high side floating supply voltage 1 12 u,vs1 output 1 - high side floating supply offset voltage 1 13 vth temperature feedback 14 vcc +15v main supply 15 hin1 logic input high side gate driver - phase 1 16 hin2 logic input high side gate driver - phase 2 17 hin3 logic input high side gate driver - phase 3 18 lin1 logic input low side gate driver - phase 1 19 lin2 logic input low side gate driver - phase 2 20 lin3 logic input low side gate driver - phase 3 21 i trip current sense and itrip pin 22 shunt+ positive current sense 23 vss logic ground www.datasheet.in
IRAM136-0461G 10 www.irf.com figure1. input/output timing diagram note 4: the shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. ho1,2,3 lo1,2,3 itrip u,v,w hin1,2,3 lin1,2,3 input-output logic level table i trip u,v,w 001 v + 0100 011 x 1 x x x hin1,2,3 lin1,2,3 ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (15 ,16 ,17) (18,19,20) (8,10,12) www.datasheet.in
IRAM136-0461G www.irf.com 11 1. electrolytic bus capacitors should be mounted as close as possible to the module bus terminals to reduce ringing and emi problems. additional high frequency ceramic capacitors mounted close to the module pins will improve perfor- mance. 2. in order to provide good decoupling between v cc -v ss and v b -v s terminals, the capacitors connected between these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1 f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an-1044 or figure 9. 4. current sense signal can be obtained from pin 22 and pin 23 5. after approx. 9 ms the fault is reset 6. pwm generator must be disabled within fault duration to guarantee shutdown of the system, and the overcurrent condition must be cleared before resuming operation typical application connection IRAM136-0461G 1 23 IRAM136-0461G controller temperature monitor pwm in current sense 15v 10m 0.1 3-phase ac motor boot-strap capacitors pwm in pwm in pwm in dc bus capacitors in-rush control itrip (logc level) pwm in pwm in ac ac vbus_1 vbus_2 gnd vb3 w,vs3 v,vs2 u,vs1 vb2 vb1 vth vcc hin1 hin2 hin3 lin1 lin3 lin2 itrip shunt+ vss +5v ac input www.datasheet.in
IRAM136-0461G 12 www.irf.com figure 3. maximum sinusoidal phase current vs. pwm switching frequency v bus =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 4. maximum sinusoidal phase current vs. modulation frequency v bus =400v, t j =150c, t c =100c, modulation depth=0.8, pf=0.6 0 102030405060708090100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j = 150c sinusoidal modulation maximum output phase rms current - a modulation frequency - hz f pwm = 20khz f pwm = 16khz f pwm = 10khz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 2 4 6 8 101214161820 pwm frequency - khz maximum output phase rms current - a t c = 80oc t c = 90oc t c = 100oc t j = 150oc sinusoidal modulation www.datasheet.in
IRAM136-0461G www.irf.com 13 figure 5. total power losses vs. pwm switching frequency, sinusoidal modulation v bus =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 6. total power losses vs. output phase current, sinusoidal modulation v bus =400v , t j =150c, modulation depth=0.8, pf=0.6 0 2 4 6 8 101214161820 0 5 10 15 20 25 30 35 total power losses - w pwm switching frequency - khz i out = 1.0 a rms i out = 1.5 a rms i out = 2.0 a rms t j = 150c sinusoidal modulation 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 70 80 t j = 150c sinusoidal modulation total power losses - w output phase current - a rms f pwm = 10 khz f pwm = 16 khz f pwm = 20 khz www.datasheet.in
IRAM136-0461G 14 www.irf.com figure 7. maximum allowable case temperature vs. output rms current per phase figure 8. estimated maximum igbt junction temperature vs. thermistor temperature v bus =400v, i phase =1.3a rms , f pwm =16khz 0.51.01.52.02.53.03.54.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 t j = 150c sinusoidal modulation maximum allowable case temperature -c output phase current - a rms f pwm = 10 khz f pwm = 16 khz f pwm = 20 khz 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 100 110 120 130 140 150 160 t j avg. = 1.0775 x t therm + 9.6086 igbt junction temperature - c internal thermistor temperature equivalent read out - c www.datasheet.in
IRAM136-0461G www.irf.com 15 figure 10. recommended bootstrap capacitor value vs. switching frequency figure 9. thermistor readout vs. temperature (2kohm pull-up resistor, 5v) and nominal thermistor resistance values vs. temperature table. -40 -40 -30 -20 -20 -10 0 01020 20 30 40 40 50 60 60 70 80 80 90 100 100 110 120 120 130 0.5 1.0 1.0 1.5 2.0 2.0 2.5 3.0 3.0 3.5 4.0 4.0 4.5 5.0 5.0 +5 v v therm r therm r ext thermistor pin read-out voltage - v thermistor temperature - c min avg. max 0 5 10 15 20 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 1.5f 2.2f 6.8f r bs d bs c bs r g1 r g2 v s h o l o com v b v cc h in l in +15v v ss v + h in l in u,v,w gnd v ss 3.3f 4.7f 10f recommended bootstrap capacitor - f pwm frequency - khz t therm r therm t therm r therm t therm r therm c k ? c k ? c k ? -40 759.605 25 22.000 90 2.004 -35 545.196 30 17.709 95 1.722 -30 396.070 35 14.344 100 1.486 -25 291.025 40 11.688 105 1.287 -20 216.008 45 9.578 110 1.119 -15 161.977 50 7.894 115 0.975 -10 122.638 55 6.540 120 0.854 -5 93.702 60 5.446 125 0.750 0 72.191 65 4.559 5 56.093 70 3.832 10 43.907 75 3.239 15 34.633 80 2.748 20 27.509 85 2.342 www.datasheet.in
IRAM136-0461G 16 www.irf.com figure 11. maximum forward voltage drop (input bridge rectifier) figure 12. maximum power loss vs. output current (input bridge rectifier) 0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t p = 400s square wave forward voltage drop - v instantaneous forward current - a t j = 25c t j = 150c 012345678910 0 10 20 30 t j = 150c total power losses - w bridge output current - a avg 180 sine conduction 180 rect conduction www.datasheet.in
IRAM136-0461G www.irf.com 17 figure 13. maximum allowable case temperature vs. output current (input bridge rectifier) 012345678910 80 90 100 110 120 130 140 150 180 sine conduction 180 rect conduction maximum allowable case temperature -c bridge output current - a avg figure 14. input bridge maximum non-repetitive surge current 110100 20 30 40 50 60 70 80 90 100 110 peak half sine-wave forward current - a half cycle current pulse - n at any rated load condition 80% v rrm applied after surge initial t j = 150c @60hz 0.0083s @50hz 0.0100s www.datasheet.in
IRAM136-0461G 18 www.irf.com figure 11. switching parameter definitions figure 11a. input to output propaga- tion turn-on delay time. figure 11b. input to output propagation turn-off delay time. figure 11c. diode reverse recovery. 50% h in /l in v ce i c h in /l in t off t f 90% i c 10% i c 50% v ce v ce i c h in /l in t on t r 50% h in /l in 90% i c 10% i c 50% v ce v ce i f h in /l in t rr i rr www.datasheet.in
IRAM136-0461G www.irf.com 19 figure ct1. switching loss circuit figure ct2. s.c.soa circuit figure ct3. r.b.soa circuit ho lo u,v,w ic driver v + lin1,2,3 5v hin1,2,3 ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o i n i o i n i o i n i o www.datasheet.in
IRAM136-0461G 20 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 2006/12 notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking for mounting instruction, see an1049 package outline 027-e2d24 23 1 56 62 3 ?3.4 typ. 0.80 0.55 22 pitches = 44 typ 46.2 2 typ. 50 2 typ 11.4 22.3 21.8 5 a ?0.20 b a c IRAM136-0461G note 1 note 2 note 3 11.4 ref. 5.0 11.4 ref 0.70 0.45 typ scale:4/1 r0.6 typ. 20.4 b 0.10 2.5 4.7 int. int. 3.2 convex only 9.0 ref. c www.datasheet.in

▲Up To Search▲

Price & Availability of IRAM136-0461G

	To Download IRAM136-0461G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .